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Other articles related with "quantum wells"：
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38502 |
Zhetong Liu(刘哲彤), Bingyao Liu(刘秉尧), Dongdong Liang(梁冬冬), Xiaomei Li(李晓梅), Xiaomin Li(李晓敏), Li Chen(陈莉), Rui Zhu(朱瑞), Jun Xu(徐军), Tongbo Wei(魏同波), Xuedong Bai(白雪冬), and Peng Gao(高鹏) |
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Nanoscale cathodoluminescence spectroscopy probing the nitride quantum wells in an electron microscope |
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Chin. Phys. B
2024 Vol.33 (3): 38502-038502
[Abstract]
(106)
[HTML 1 KB]
[PDF 1300 KB]
(117)
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104205 |
Shi-Xian Han(韩实现), Jin-Yi Yan(严进一), Chun-Fang Cao(曹春芳), Jin Yang(杨锦), An-Tian Du(杜安天), Yuan-Yu Chen(陈元宇), Ruo-Tao Liu(刘若涛), Hai-Long Wang(王海龙), and Qian Gong(龚谦) |
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Single-mode GaSb-based laterally coupled distributed-feedback laser for CO2 gas detection |
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Chin. Phys. B
2023 Vol.32 (10): 104205-104205
[Abstract]
(101)
[HTML 0 KB]
[PDF 1333 KB]
(16)
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107309 |
Gang Wang(王刚), Shan Guan(管闪), Zhi-Gang Song(宋志刚), and Jun-Wei Luo(骆军委) |
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Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface |
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Chin. Phys. B
2023 Vol.32 (10): 107309-107309
[Abstract]
(135)
[HTML 1 KB]
[PDF 1455 KB]
(118)
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74206 |
Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋) |
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Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers |
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Chin. Phys. B
2022 Vol.31 (7): 74206-074206
[Abstract]
(352)
[HTML 1 KB]
[PDF 607 KB]
(69)
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34208 |
Zhuang-Zhuang Zhao(赵壮壮), Meng Xun(荀孟), Guan-Zhong Pan(潘冠中), Yun Sun(孙昀), Jing-Tao Zhou(周静涛), and De-Xin Wu(吴德馨) |
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Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers |
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Chin. Phys. B
2022 Vol.31 (3): 34208-034208
[Abstract]
(381)
[HTML 0 KB]
[PDF 1295 KB]
(57)
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17801 |
Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武) |
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Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer |
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Chin. Phys. B
2022 Vol.31 (1): 17801-017801
[Abstract]
(548)
[HTML 0 KB]
[PDF 547 KB]
(94)
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97302 |
Huying Zheng(郑湖颖), Zhiyang Chen(陈智阳), Hai Zhu(朱海), Ziying Tang(汤梓荧), Yaqi Wang(王亚琪), Haiyuan Wei(韦海园), Chongxin Shan(单崇新) |
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Dispersion of exciton-polariton based on ZnO/MgZnO quantum wells at room temperature |
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Chin. Phys. B
2020 Vol.29 (9): 97302-097302
[Abstract]
(682)
[HTML 0 KB]
[PDF 1244 KB]
(115)
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107803 |
Chang-Fu Li(李长富), Kai-Ju Shi(时凯居), Ming-Sheng Xu(徐明升), Xian-Gang Xu(徐现刚), Zi-Wu Ji(冀子武) |
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Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells |
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Chin. Phys. B
2019 Vol.28 (10): 107803-107803
[Abstract]
(700)
[HTML 1 KB]
[PDF 1958 KB]
(118)
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97104 |
Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Haiyan Wu(吴海燕), Ziguang Ma(马紫光), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘) |
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Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction |
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Chin. Phys. B
2018 Vol.27 (9): 97104-097104
[Abstract]
(829)
[HTML 1 KB]
[PDF 666 KB]
(170)
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17302 |
Wei-Min Zheng(郑卫民), Wei-Yan Cong(丛伟艳), Su-Mei Li(李素梅), Ai-Fang Wang(王爱芳), Bin Li(李斌), Hai-Bei Huang(黄海北) |
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Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells |
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Chin. Phys. B
2018 Vol.27 (1): 17302-017302
[Abstract]
(583)
[HTML 1 KB]
[PDF 642 KB]
(200)
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87311 |
Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Ziguang Ma(马紫光), Haiyan Wu(吴海燕), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘) |
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Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure |
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Chin. Phys. B
2017 Vol.26 (8): 87311-087311
[Abstract]
(946)
[HTML 1 KB]
[PDF 1381 KB]
(359)
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87307 |
Bin Li(黎斌), Shan-Jin Huang(黄善津), Hai-Long Wang(王海龙), Hua-Long Wu(吴华龙), Zhi-Sheng Wu(吴志盛), Gang Wang(王钢), Hao Jiang(江灏) |
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Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow |
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Chin. Phys. B
2017 Vol.26 (8): 87307-087307
[Abstract]
(559)
[HTML 1 KB]
[PDF 379 KB]
(204)
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17805 |
Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫) |
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Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths |
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Chin. Phys. B
2017 Vol.26 (1): 17805-017805
[Abstract]
(578)
[HTML 1 KB]
[PDF 308 KB]
(328)
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117803 |
Haiyan Wu(吴海燕), Ziguang Ma(马紫光), Yang Jiang(江洋), Lu Wang(王禄), Haojun Yang(杨浩军), Yangfeng Li(李阳锋), Peng Zuo(左朋), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Junming Zhou(周钧铭), Wuming Liu(刘伍明), Hong Chen(陈弘) |
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Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction |
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Chin. Phys. B
2016 Vol.25 (11): 117803-117803
[Abstract]
(733)
[HTML 1 KB]
[PDF 560 KB]
(328)
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98101 |
E Ben Salem, R Chaabani, S Jaziri |
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Mid/far-infrared photo-detectors based on graphene asymmetric quantum wells |
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Chin. Phys. B
2016 Vol.25 (9): 98101-098101
[Abstract]
(586)
[HTML 1 KB]
[PDF 2461 KB]
(486)
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87801 |
Ya-Li Liu(刘雅丽), Peng Jin(金鹏), Gui-Peng Liu(刘贵鹏), Wei-Ying Wang(王维颖), Zhi-Qiang Qi(齐志强), Chang-Qing Chen(陈长清), Zhan-Guo Wang(王占国) |
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Exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells |
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Chin. Phys. B
2016 Vol.25 (8): 87801-087801
[Abstract]
(606)
[HTML 1 KB]
[PDF 300 KB]
(366)
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47302 |
Wei-Min Zheng(郑卫民), Su-Mei Li(李素梅), Wei-Yan Cong(丛伟艳), Ai-Fang Wang(王爱芳), Bin Li(李斌), Hai-Bei Huang(黄海北) |
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Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well |
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Chin. Phys. B
2016 Vol.25 (4): 47302-047302
[Abstract]
(655)
[HTML 1 KB]
[PDF 304 KB]
(312)
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127801 |
Liu Wei (刘炜), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Zhu Jian-Jun (朱建军), Li Xiang (李翔), Liang Feng (梁锋), Liu Jian-Ping (刘建平), Yang Hui (杨辉) |
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Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode |
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Chin. Phys. B
2015 Vol.24 (12): 127801-127801
[Abstract]
(805)
[HTML 1 KB]
[PDF 1354 KB]
(451)
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84211 |
Hamedi H R, Mehmannavaz M R, Afshari Hadi |
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Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells |
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Chin. Phys. B
2015 Vol.24 (8): 84211-084211
[Abstract]
(719)
[HTML 1 KB]
[PDF 1050 KB]
(286)
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24219 |
Wang Qiang (王强), Ji Zi-Wu (冀子武), Wang Fan (王帆), Mu Qi (牟奇), Zheng Yu-Jun (郑雨军), Xu Xian-Gang (徐现刚), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红) |
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Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells |
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Chin. Phys. B
2015 Vol.24 (2): 24219-024219
[Abstract]
(863)
[HTML 0 KB]
[PDF 484 KB]
(419)
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124202 |
She Yan-Chao (佘彦超), Zheng Xue-Jun (郑学军), Wang Deng-Long (王登龙) |
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Enhancement of four-wave mixing process in a four-level double semiconductor quantum well |
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Chin. Phys. B
2014 Vol.23 (12): 124202-124202
[Abstract]
(537)
[HTML 1 KB]
[PDF 331 KB]
(324)
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116103 |
He Chao (何超), Liu Zhi (刘智), Zhang Xu (张旭), Huang Wen-Qi (黄文奇), Xue Chun-Lai (薛春来), Cheng Bu-Wen (成步文) |
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Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature |
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Chin. Phys. B
2014 Vol.23 (11): 116103-116103
[Abstract]
(746)
[HTML 1 KB]
[PDF 719 KB]
(332)
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117803 |
Wang Wei-Ying (王维颖), Liu Gui-Peng (刘贵鹏), Jin Peng (金鹏), Mao De-Feng (毛德丰), Li Wei (李维), Wang Zhan-Guo (王占国), Tian Wu (田武), Chen Chang-Qing (陈长清) |
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Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells |
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Chin. Phys. B
2014 Vol.23 (11): 117803-117803
[Abstract]
(495)
[HTML 1 KB]
[PDF 272 KB]
(467)
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106106 |
Huang Cheng-Cheng (黄呈橙), Zhang Xia (张霞), Xu Fu-Jun (许福军), Xu Zheng-Yu (许正昱), Chen Guang (陈广), Yang Zhi-Jian (杨志坚), Tang Ning (唐宁), Wang Xin-Qiang (王新强), Shen Bo (沈波) |
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Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template |
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Chin. Phys. B
2014 Vol.23 (10): 106106-106106
[Abstract]
(555)
[HTML 1 KB]
[PDF 1130 KB]
(495)
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54211 |
Liang Ming-Ming (梁明明), Weng Guo-En (翁国恩), Zhang Jiang-Yong (张江勇), Cai Xiao-Mei (蔡晓梅), Lü Xue-Qin (吕雪芹), Ying Lei-Ying (应磊莹), Zhang Bao-Ping (张保平) |
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Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells |
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Chin. Phys. B
2014 Vol.23 (5): 54211-054211
[Abstract]
(739)
[HTML 1 KB]
[PDF 446 KB]
(611)
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88401 |
Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content |
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Chin. Phys. B
2013 Vol.22 (8): 88401-088401
[Abstract]
(614)
[HTML 1 KB]
[PDF 421 KB]
(675)
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88102 |
Wan Tu-Tu (万图图), Ye Zhan-Qi (叶展圻), Tao Tao (陶涛), Xie Zi-Li (谢自力), Zhang Rong (张荣), Liu Bin (刘斌), Xiu Xiang-Qian (修向前), Li Yi (李毅), Han Ping (韩平), Shi Yi (施毅), Zheng You-Dou (郑有炓) |
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The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays |
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Chin. Phys. B
2013 Vol.22 (8): 88102-088102
[Abstract]
(767)
[HTML 1 KB]
[PDF 521 KB]
(719)
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78402 |
Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Li Dan-Wei (李丹伟), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells |
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Chin. Phys. B
2013 Vol.22 (7): 78402-078402
[Abstract]
(857)
[HTML 1 KB]
[PDF 2267 KB]
(781)
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77305 |
Wang Jian-Xia (王建霞), Yang Shao-Yan (杨少延), Wang Jun (王俊), Liu Gui-Peng (刘贵鹏), Li Zhi-Wei (李志伟), Li Hui-Jie (李辉杰), Jin Dong-Dong (金东东), Liu Xiang-Lin (刘祥林), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) |
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Electron mobility limited by surface and interface roughness scatterings in AlxGa1-xN/GaN quantum wells |
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Chin. Phys. B
2013 Vol.22 (7): 77305-077305
[Abstract]
(750)
[HTML 1 KB]
[PDF 419 KB]
(649)
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76803 |
Cao Wen-Yu (曹文彧), He Yong-Fa (贺永发), Chen Zhao (陈钊), Yang Wei (杨薇), Du Wei-Min (杜为民), Hu Xiao-Dong (胡晓东) |
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Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure |
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Chin. Phys. B
2013 Vol.22 (7): 76803-076803
[Abstract]
(809)
[HTML 1 KB]
[PDF 286 KB]
(909)
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57802 |
N. Zamani, A. Keshavarz, M. J. Karimi |
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Electronic Raman scattering in double semi-parabolic quantum wells |
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Chin. Phys. B
2013 Vol.22 (5): 57802-057802
[Abstract]
(547)
[HTML 1 KB]
[PDF 261 KB]
(553)
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37802 |
Gu Yi (顾溢), Zhang Yong-Gang (张永刚), Song Yu-Xin (宋禹忻), Ye Hong (叶虹), Cao Yuan-Ying (曹远迎), Li Ai-Zhen (李爱珍), Wang Shu-Min (王庶民) |
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Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence |
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Chin. Phys. B
2013 Vol.22 (3): 37802-037802
[Abstract]
(775)
[HTML 0 KB]
[PDF 305 KB]
(1161)
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27805 |
Mu Xue (穆雪), Wu Xiao-Ming (吴晓明), Hua Yu-Lin (华玉林), Jiao Zhi-Qiang (焦志强), Shen Li-Ying (申利莹), Su Yue-Ju (苏跃举), Bai Juan-Juan (白娟娟), Bi Wen-Tao (毕文涛), Yin Shou-Gen (印寿根), Zheng Jia-Jin (郑加金 ) |
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Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer |
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Chin. Phys. B
2013 Vol.22 (2): 27805-027805
[Abstract]
(862)
[HTML 1 KB]
[PDF 276 KB]
(3952)
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17102 |
Hao Ya-Fei (郝亚非) |
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Spin–orbit interaction in coupled quantum wells |
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Chin. Phys. B
2013 Vol.22 (1): 17102-017102
[Abstract]
(741)
[HTML 0 KB]
[PDF 266 KB]
(616)
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114203 |
Fan Shuang-Li (樊双莉), Shi Yi-Ping (石义萍), Zhang Hong-Jun (张红军), Sun Hui (孙辉 ) |
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Tunneling-induced ultraslow bright and dark solitons in quantum wells |
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Chin. Phys. B
2012 Vol.21 (11): 114203-114203
[Abstract]
(1186)
[HTML 1 KB]
[PDF 464 KB]
(646)
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117301 |
Guo Huai-Ming (郭怀明), Zhang Xiang-Lin (张相林), Feng Shi-Ping (冯世平 ) |
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The robustness of quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells |
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Chin. Phys. B
2012 Vol.21 (11): 117301-117301
[Abstract]
(1105)
[HTML 1 KB]
[PDF 1211 KB]
(601)
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84207 |
Cao Xiao-Long (曹小龙), Li Zhong-Yang (李忠洋), Yao Jian-Quan (姚建铨), Wang Yu-Ye (王与烨), Zhu Neng-Nian (朱能念), Zhong Kai (钟凯), Xu De-Gang (徐德刚 ) |
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Intersubband absorption with difference-frequency generation in GaAs asymmetric quantum wells |
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Chin. Phys. B
2012 Vol.21 (8): 84207-084207
[Abstract]
(1131)
[HTML 1 KB]
[PDF 3030 KB]
(630)
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17805 |
Hu Wei-Xuan(胡炜玄), Cheng Bu-Wen(成步文), Xue Chun-Lai(薛春来), Zhang Guang-Ze(张广泽), Su Shao-Jian(苏少坚), Zuo Yu-Hua(左玉华), and Wang Qi-Ming(王启明) |
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Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon |
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Chin. Phys. B
2012 Vol.21 (1): 17805-017805
[Abstract]
(1335)
[HTML 1 KB]
[PDF 358 KB]
(863)
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37807 |
Lu Hui-Min(路慧敏) and Chen Gen-Xiang(陈根祥) |
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Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED |
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Chin. Phys. B
2011 Vol.20 (3): 37807-037807
[Abstract]
(1411)
[HTML 0 KB]
[PDF 377 KB]
(723)
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28402 |
Zhang Xiao-Bin(张小宾), Wang Xiao-Liang(王晓亮), Xiao Hong-Ling(肖红领), Yang Cui-Bai(杨翠柏), Hou Qi-Feng(侯奇峰), Yin Hai-Bo(殷海波), Chen Hong(陈竑), and Wang Zhan-Guo(王占国) |
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InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage |
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Chin. Phys. B
2011 Vol.20 (2): 28402-028402
[Abstract]
(1450)
[HTML 1 KB]
[PDF 596 KB]
(2593)
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116801 |
Xie Zi-Li(谢自力), Zhang Rong(张荣), Fu De-Yi(傅德颐), Liu Bin(刘斌),Xiu Xiang-Qian(修向前), Hua Xue-Mei(华雪梅), Zhao Hong(赵红), Chen Peng(陈鹏),Han Ping(韩平), Shi Yi(施毅), and Zheng You-Dou(郑有炓) |
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Growth and properties of wide spectral white light emitting diodes |
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Chin. Phys. B
2011 Vol.20 (11): 116801-116801
[Abstract]
(1210)
[HTML 0 KB]
[PDF 148 KB]
(657)
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108504 |
Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) |
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Blue InGaN light-emitting diodes with dip-shaped quantum wells |
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Chin. Phys. B
2011 Vol.20 (10): 108504-108504
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94101 |
Bao Jin(包锦) and Liang Xi-Xia(梁希侠) |
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Interface phonon–polaritons in quantum well systems of polar ternary mixed crystals |
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Chin. Phys. B
2010 Vol.19 (9): 94101-094101
[Abstract]
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(642)
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76803 |
Wang Lai(汪莱), Wang Jia-Xing(王嘉星), Zhao Wei(赵维), Zou Xiang(邹翔), and Luo Yi(罗毅) |
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Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells |
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Chin. Phys. B
2010 Vol.19 (7): 76803-076803
[Abstract]
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74216 |
Zhang Yun-Xiao(张云霄), Liao Zai-Yi(廖栽宜), Zhao Ling-Juan(赵玲娟), Pan Jiao-Qing(潘教青), Zhu Hong-Liang(朱洪亮), and Wang Wei(王圩) |
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Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators |
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Chin. Phys. B
2010 Vol.19 (7): 74216-074216
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(1198)
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127801 |
Li Da-Bing(黎大兵), Hu Wei-Guo(胡卫国), Miyake Hideto(三宅秀人), Hiramatsu Kazumasa(平松和政), and Song Hang(宋航) |
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Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs |
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Chin. Phys. B
2010 Vol.19 (12): 127801-127801
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117303 |
Ji Zi-Wu(冀子武), Zheng Yu-Jun(郑雨军), and Xu Xian-Gang(徐现刚) |
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Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells |
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Chin. Phys. B
2010 Vol.19 (11): 117303-117305
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